Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, open source physical framework modeling these effects a unified fashion using nonradiative multiphonon theory on one-dimensional device geometry. Here give overview about underlying theory, discuss newly introduced features compared to original also review recent advances physics enabled by new features. The usefulness v3.0 community is highlighted several practical examples including automatic extraction defect distributions, TAT high-k capacitors BTI/RTN at cryogenic temperatures.